? semiconductor components industries, llc, 2015 january, 2015 ? rev. 3 1 publication order number: n tp2955/d ntp2955 power mosfet ?60 v, ?12 a, single p?channel, to?220 features ? low r ds(on) ? rugged performance ? fast switching ? these are pb?free devices* applications ? industrial ? automotive ? power supplies maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss ?60 v gate?to?source v oltage v gs 20 v continuous drain current (note 1) steady state t c = 25 c i d ?12 a t c = 85 c ?9.0 power dissipation (note 1) t c = 25 c p d 62.5 w continuous drain current (note 1) steady state t a = 25 c i d ?2.4 a t a = 85 c ?1.8 power dissipation (note 1) t a = 25 c p d 2.4 w pulsed drain current t p =10 s i dm ?42 a operating junction and storage temperature t j , t stg ?55 to 175 c source current (body diode) i s ?12 a single pulse drain?to?source avalanche energy (v dd = ?30 v, v g = ?10 v, i pk = ?12 a, l = 3.0 mh, r g = 3.0 ) eas 216 mj lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction?to?case r jc 2.4 c/w junction?to?ambient ? steady state (note 1) r ja 62.5 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. when surface mounted to an fr4 board using 1 in pad size (cu. area = 1.127 in sq [1 oz] including traces). *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. d s g p?channel ?60 v 156 m @ ?10 v r ds(on) typ ?12 a i d max v (br)dss device package shipping ordering information to?220 case 221a style 5 1 2 3 a = assembly location y = year ww = work week g = pb?free package NTP2955G t o?220 (pb?free) 50 units / rail www. onsemi.com nt2955g ayww ds d g 1 marking diagram & pin assignment
ntp2955 www. onsemi.com 2 electrical characteristics (t j =25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?60 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 67 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ?48 v t j = 25 c ?1.0 a t j = 125 c ?10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = ?250 a ?2.0 ?4.0 v negative threshold temperature coefficient v gs(th) /t j 56 mv/ c drain?to?source on resistance r ds(on) v gs = ?10 v, i d = ?12 a 156 196 m forward transconductance g fs v ds = ?60 v, i d = ?12 a 6.0 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ?25 v 507 700 pf output capacitance c oss 150 250 reverse transfer capacitance c rss 48 98 total gate charge q g(tot) v gs = ?10 v, v ds = ?48 v, i d = ?12 a 14 nc threshold gate charge q g(th) 1.6 2.5 gate?to?source charge q gs 3.4 gate?to?drain charge q gd 6.2 switching characteristics (note 3) turn?on delay time t d(on) v gs = ?10 v, v dd = ?30 v, i d = ?12 a, r g = 9.1 10 20 ns rise time t r 41 80 turn?off delay time t d(off) 27 47 fall time t f 45 85 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ?12 a t j = 25 c ?1.6 ?2.0 v t j = 125 c ?1.36 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = ?12 a 53 ns charge time t a 42 discharge time t b 12 reverse recovery charge q rr 126 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntp2955 www. onsemi.com 3 0 5 10 15 20 25 0246810 figure 1. on?region characteristics ?v ds , drain?to?source voltage (v) ?i d , drain current (a) t j = 25 c v gs = ?10 v ?9.5 v ?8.0 v ?7.0 v ?6.0 v ?5.5 v ?5.0 v ?4.5 v ?4.0 v . 0 5 10 15 20 25 024681 0 figure 2. transfer characteristics ?v gs , gate?t o?source voltage (v) ?i d , drain current (a) v gs = ?10 v t j = 125 c t j = 25 c t j = ?55 c 0 0.1 0.2 0.3 0.4 02468101214 figure 3. on?resistance versus drain current and temperature ?i d , drain current (a) r ds(on) , drain?to?source resistance ( ) t = 125 c t = 25 c t = ?55 c v gs = ?10 v 0 0.1 0.2 0.3 0.4 024681012 14 figure 4. on?resistance versus drain current and gate voltage ?i d , drain current (a) r ds(on) , drain?to?source resistance ( ) v gs = ?10 v v gs = ?15 v t j = 25 c 0 0.5 1.0 1.5 2.0 2.5 ?50 ?25 0 25 50 75 100 125 150 175 figure 5. on?resistance variation with temperature t j , junction temperature ( c) r ds(on) , drain?to?source resistance (normalized) i d = ?12 a v gs = ?10 v 1 10 100 1000 0 1020304050 60 figure 6. drain?to?source leakage versus voltage ?v ds , drain?to?source voltage (v) ?i dss , leakage (na) t j = 125 c t j = 100 c v gs = 0 v
ntp2955 www. onsemi.com 4 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 ?10 ?5 0 5 10 15 20 25 figure 7. capacitance variation gate?to?source or drain?t o?source voltage (v) c, capacitance (pf) t j = 25 c v gs = ?0 v ?v gs ?v ds v ds = ?0 v c iss c rss c rss c iss c oss 0 2 4 6 8 10 12 0481216 0 10 20 30 40 50 60 figure 8. gate?to?source and drain?to?source voltage versus total charge q g , total gate charge, (nc) ?v gs , gate?t o?source voltage (v) v ds , drain?to?source voltage (v) i d = ?12 a t j = 25 c q t q gd q gs v gs v ds 1 10 100 1000 1 10 100 figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) t, time (ns) t r t f t d(off) t d(on) v dd = ?30 v i d = ?12 a v gs = ?10 v 0 2 4 6 8 10 12 14 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 figure 10. diode forward voltage versus current ?v sd , source?to?drain voltage (v) ?i s , source current (a) v gs = ?0 v t j = 25 c 0.1 1 10 100 1000 0.1 1.0 10 100 10 s 1 ms 100 s 10 ms dc v gs = ?10 v single pulse t j = 25 c r ds(on) limit thermal limit package limit figure 11. maximum rated forward biased safe operating area ?v ds , drain?to?source voltage (v) ?i d , drain current (a) 0 50 100 150 200 250 25 50 75 100 125 150 175 figure 12. maximum avalanche energy versus starting junction temperature t j , starting junction temperature ( c) e as , single pulse drain?to?source avalanche energy (mj) i d = ?12 a
ntp2955 www. onsemi.com 5 package dimensions to?220 case 221a?09 issue ah style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntp2955/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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